How to monitor temperature with IGBT thyristor-INNO

Transistor bipolar de porta isolada (IGBT) é amplamente utilizado em vários campos, como comunicação, transporte, e poder, e está evoluindo para alta tensão, alta freqüência, e alta potência. Os altos requisitos de segurança dos sistemas acima aumentam os requisitos de confiabilidade do IGBT. Portanto, monitoramento de estado e previsão de vida do IGBT são extremamente importantes. Existem muitas formas de falha do IGBT, e a temperatura é o principal fator que causa sua falha. Portanto, a análise térmica é uma parte importante da avaliação do estado do IGBT, e a medição em tempo real da temperatura da junção IGBT é de grande importância para melhorar a confiabilidade do sistema.

Tiristores de alta tensão e alta potência são componentes-chave de válvulas conversoras em projetos de transmissão de corrente contínua de ultra-alta tensão ou ultra-alta tensão, e o estado de saúde dos tiristores afeta diretamente a segurança e a confiabilidade dos projetos de transmissão de corrente contínua. Durante a operação de tiristores, o envelhecimento é inevitável devido aos efeitos combinados da alta tensão, alta corrente, temperatura, umidade, vibração mecânica, e radiação, entre outras tensões. Os parâmetros de desempenho dos tiristores também mudam com o envelhecimento. Uma compreensão abrangente das leis de envelhecimento e degradação de parâmetros dos tiristores é de grande importância para avaliar o estado dos tiristores, formulação de planos científicos de manutenção, e prever a vida restante dos tiristores.

Como um circuito de porta de baixa e alta tensão, a operação normal do IGBT determina diretamente o estado de funcionamento do compressor elétrico. IGBT failure is one of the main problems in the after-sales market of electric compressors for electric vehicles. The failure modes mainly include IGBT breakdown and short circuit, among which IGBT overcurrent and overheating are the main causes of its failure. Atualmente, most manufacturers add IGBT overcurrent protection (proteção contra sobrecarga) and IGBT overheat protection to the compressor control strategy based on the failure mode of IGBT. No entanto, these protection strategies were not interrelated before, and IGBT may work for a long time under high current and high temperature, which undoubtedly reduces the service life of IGBT. Além disso, this protection method will limit the working current of IGBT, thereby limiting the power output of the motor.

With the continuous depletion of chemical energy and the intensification of environmental pollution, the market share of electric vehicles has been increasing year by year. As the core component of electric vehicles, the motor controller provides driving force for the entire vehicle. Insulated gate bipolar transistor (IGBT) plays an important role as the core component of its control part. Due to the high power of the driving motor used in electric vehicles and the harsh working environment, IGBT modules are required to handle large currents. This requires IGBT modules to have good heat dissipation capabilities and be able to withstand high operating temperatures.

Semiconductor power devices represented by IGBT are one of the core components of inverters and also one of the main heating components. Their thermal management is extremely important and greatly affects the lifespan of the devices and the usable life of the inverters. Heat mainly affects the lifespan of IGBT devices from two temperature aspects. Primeiramente, the allowable temperature. Atualmente, the maximum allowable temperature for industrial IGBT devices is mostly 150 ℃, with a small portion reaching 175 ℃. If the allowable temperature is exceeded, the reliability of the device cannot be guaranteed and it is easy to fail; The second is temperature fluctuation or temperature cycling, because IGBT devices contain multiple materials inside, and each material has a different thermal expansion rate. Temperature fluctuations cause the device to repeatedly expand and contract, and the degree of expansion and contraction of different materials varies. Frequent temperature fluctuations can lead to IGBT device failure due to thermal fatigue. IGBT devices allow temperature to be monitored in current inverters, and there is a certain margin in product design; No entanto, temperature fluctuations are often overlooked, and even when paying attention to temperature fluctuations, the main consideration is to avoid IGBT junction temperatures exceeding the allowable temperature during fluctuations, rather than focusing on temperature cycling life. This is because the thermal fatigue of devices caused by temperature fluctuations is closely related to the frequency and amplitude of fluctuations, and is a long-term accumulation process.

FJINNO provides a fluorescent dispositivo de medição de temperatura de fibra óptica that can directly achieve IGBT fiber optic temperature measurement, thyristor fiber optic temperature measurement, and thyristor fiber optic temperature measurement.