How to monitor temperature with IGBT thyristor-INNO

絶縁ゲート型バイポーラトランジスタ (IGBT) is widely used in various fields such as communication, 交通機関, そして力, and is developing towards high voltage, high frequency, and high power. The high safety requirements of the above systems increase the reliability requirements of IGBT. したがって, state monitoring and life prediction of IGBT are extremely important. There are many forms of IGBT failure, and temperature is the main factor causing its failure. したがって, thermal analysis is an important part of IGBT state evaluation, and real-time measurement of IGBT junction temperature is of great significance for improving system reliability.

High voltage and high-power thyristors are key components of converter valves in ultra-high voltage or ultra-high voltage direct current transmission projects, and the health status of thyristors directly affects the safety and reliability of direct current transmission projects. During the operation of thyristors, aging is inevitable due to the combined effects of high voltage, 大電流, 温度, 湿度, 機械的振動, そして放射線, among other stresses. The performance parameters of thyristors also change with aging. A comprehensive understanding of the aging and parameter degradation laws of thyristors is of great significance for evaluating the state of thyristors, formulating scientific maintenance plans, and predicting the remaining life of thyristors.

As a low-voltage and high-voltage gate circuit, the normal operation of IGBT directly determines the working state of the electric compressor. IGBT failure is one of the main problems in the after-sales market of electric compressors for electric vehicles. The failure modes mainly include IGBT breakdown and short circuit, among which IGBT overcurrent and overheating are the main causes of its failure. 現在のところ, most manufacturers add IGBT overcurrent protection (過負荷保護) and IGBT overheat protection to the compressor control strategy based on the failure mode of IGBT. しかし, these protection strategies were not interrelated before, and IGBT may work for a long time under high current and high temperature, which undoubtedly reduces the service life of IGBT. さらに, this protection method will limit the working current of IGBT, thereby limiting the power output of the motor.

With the continuous depletion of chemical energy and the intensification of environmental pollution, 電気自動車の市場シェアは年々増加しています. 電気自動車の中核部品として, モーターコントローラーは車両全体に駆動力を供給します. 絶縁ゲートバイポーラトランジスタ (IGBT) 制御部の中核部品として重要な役割を果たします。. 電気自動車に使用される駆動モーターは大出力であり、過酷な作業環境のため, IGBTモジュールは大電流を扱う必要がある. これには、IGBT モジュールが良好な放熱能力を備え、高い動作温度に耐えることができる必要があります。.

IGBTに代表される半導体パワーデバイスは、インバータの中核部品の一つであり、主要な発熱部品の一つでもあります。. 熱管理は非常に重要であり、デバイスの寿命とインバータの耐用年数に大きく影響します。. 熱は主に 2 つの温度側面から IGBT デバイスの寿命に影響を与えます。. まず最初に, 許容温度. 現在, 産業用 IGBT デバイスの最大許容温度は、ほとんどの場合、 150 ℃, ごく一部が到達しています 175 ℃. 許容温度を超えた場合, デバイスの信頼性が保証できず、故障しやすい; 2つ目は温度変動または温度サイクルです。, IGBT デバイスの内部には複数の材料が含まれているため、, それぞれの材料は異なる熱膨張率を持っています. 温度変化によりデバイスは膨張と収縮を繰り返します。, 材質が異なれば伸縮の度合いも異なります. Frequent temperature fluctuations can lead to IGBT device failure due to thermal fatigue. IGBT devices allow temperature to be monitored in current inverters, and there is a certain margin in product design; しかし, temperature fluctuations are often overlooked, and even when paying attention to temperature fluctuations, the main consideration is to avoid IGBT junction temperatures exceeding the allowable temperature during fluctuations, rather than focusing on temperature cycling life. This is because the thermal fatigue of devices caused by temperature fluctuations is closely related to the frequency and amplitude of fluctuations, and is a long-term accumulation process.

FJINNO provides a fluorescent 光ファイバー温度測定装置 that can directly achieve IGBT fiber optic temperature measurement, thyristor fiber optic temperature measurement, and thyristor fiber optic temperature measurement.